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| AUIRF3205 hexfet ? power mosfet 11/10/11 www.irf.com 1 pd - 97741 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. automotive grade hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ features !" # # $ % & %$ # $# '( % ) *& "# $ +$ ,- description specifically designed for automotive applications, this stripe planar design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other appli- cations. g d s gate drain source to-220ab AUIRF3205 s d g d s d g parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r ? jc junction-to-case ??? 0.75 r ? cs case-to-sink, flat, greased surface 0.50 ??? c/w r ? ja junction-to-ambient ??? 62 max. 110 80 390 75 20 264 62 -55 to + 175 300 10 lbf in (1.1n m) 200 1.3 20 v (br)dss 55v r ds(on) max. 8.0m ? i d (silicon limited) 110a i d (package limited) 75a AUIRF3205 2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) starting t j = 25c, l = 138 h, r g = 25 ? , i as = 62a. (see figure 12) i sd ? 62a di/d ? 207a/ s, v dd ? v (br)dss , t j ?? 175c. pulse width ? 400 s; duty cycle ? 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c. r ?? is measured at s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v ? ? ? a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 146 q gs gate-to-source charge ??? ??? 35 nc q gd gate-to-drain ("miller") charge ??? ??? 54 t d(on) turn-on delay time ??? 14 ??? t r rise time ??? 101 ??? t d(off) turn-off delay time ??? 50 ??? ns t f fall time ??? 65 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 3247 ??? c oss output capacitance ??? 781 ??? pf c rss reverse transfer capacitance ??? 211 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 110 (body diode) a i sm pulsed source current ??? ??? 390 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 69 104 ns q rr reverse recovery charge ??? 143 215 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) t j = 25c, i f = 62a di/dt = 100a/ s t j = 25c, i s = 62a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 62a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 44v, v gs = 0v, t j = 150c mosfet symbol v dd = 28v i d = 62a r g = 4.5 ? conditions v gs = 10v, see fig. 10 v gs = 0v v ds = 25v ? = 1.0mhz, see fig. 5 conditions v ds = 25v, i d = 62a i d = 62a v ds = 44v v gs = 20v v gs = -20v v gs = 10v, see fig. 6 & 13 AUIRF3205 www.irf.com 3 . +$ , / ,$ 0 , 1 / 2 # 3 ,3 .. 4 (# 5, 6 4"+ 7 8$ 8$ , # 3 ... * # 3 qualification information ? to-220 n/a qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 (+/- 600v) ??? aec-q101-002 human body model class h1c (+/- 2000v) ??? aec-q101-001 AUIRF3205 4 www.irf.com # $#$ " # $#$ " # , " 9 : 3 # $ 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 107a 1 10 100 1000 4 6 8 10 12 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j AUIRF3205 www.irf.com 5 # &$ % # "# 3 &$ # ; " 3 ;&$ # &$ % <($ &, # 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 62a v = 11v ds v = 27v ds v = 44v ds 1 10 100 1000 10000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j AUIRF3205 6 www.irf.com <($ "$ 3 " # $ & " $ v ds 90% 10% v gs t d(on) t r t d(off) t f & =, <($ 4,, 0#) >$" ???? ??????? + - 25 50 75 100 125 150 175 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package <($ "$ 3 " # $ & " $ v ds 90% 10% v gs t d(on) t r t d(off) t f & =, <($ 4,, 0#) >$" ???? ??????? 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) AUIRF3205 www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - 7 ; " " $ ? ; " =, @ # 0$ =, @ # 0$ " $ t p v (br)dss i as <($ 4 3 "$ r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 25a 44a 62a AUIRF3205 8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - % 9" *4a%4 & - ??? ??? ! ??? " # $ %% ??? & '# #' ????? () " # ???? *# + ???? ( , " # '# - AUIRF3205 www.irf.com 9 9$/ 0 " " bc b ==c = d =d c $) % AUIRF3205 10 www.irf.com ordering information base part number package type standard pack complete part number form quantity AUIRF3205 to-220 tube 50 AUIRF3205 AUIRF3205 www.irf.com 11 ! " #$% & ' ( ! $ ) * ! * ! + ( ( & ! ,& ( ! ! ! + - ( ! ! ! ! ) ! & ! ! - ) ! . / - / & ) - ! 0 1 $ 1$ . 1$ ( ! / 1$ 2 ( / * ( ! .0'+. 34565 ( #$%! / 2 ( ! world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 |
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